650 V E-HEMT transistors
Application Notes
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GN001 Application Guide - Design with GaN Enhancement
mode HEMT
Download
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GN002 Thermal Design for Top-Side Cooled GaNPX-T Devices
Download
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GN004 Design considerations of paralleled GaN HEMT
Download
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GN005 App Note - PCB Thermal Design Guide for GaN
Enhancement Mode Power Transistors
Download
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GN006 App Note SPICE model for GaN HEMT- usage guidelines
and example
Download
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GN007 Modeling Thermal Behavior of GaNPX® E-HEMTs Using
RC Thermal SPICE Models
Download
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GN008 GaN Switching Loss Simulation Using LTSpice
Download
Expand product table » »
Part No. | Voltage | Current | Rds(on) | Dimensions | Cooling | |
[V] | [A] | [mΩ] | [mm] | |||
GS66502B | 650 V | 7.5 A | 200 mΩ | 5.0 x 6.6 x 0.51 | Bottom-side | |
GS66504B | 650 V | 15 A | 100 mΩ | 5.0 x 6.6 x 0.51 | Bottom-side | |
GS66506T | 650 V | 22.5 A | 67 mΩ | 5.6 x 4.5 x 0.54 | Top-side | |
GS66508B | 650 V | 30 A | 50 mΩ | 7.0 x 8.4 x 0.51 | Bottom-side | |
GS66508P | 650 V | 30 A | 50 mΩ | 10.0 x 8.7 x 0.51 | Bottom-side | |
GS66508T | 650 V | 30 A | 50 mΩ | 6.9 x 4.5 x 0.54 | Top-side | |
GS66516T | 650 V | 60 A | 25 mΩ | 9.0 x 7.6 x 0.54 | Top-side | |
GS66516B | 650 V | 60 A | 25 mΩ | 11.0 x 9.0 x 0.51 | Bottom-side | |
|
GS-065-120-1-D |
650 V |
120 A |
12 mΩ |
12.6 x 5.6 x 0.3 |
Die |