Products

650 V E-HEMT transistors


Application Notes

·         GN001 Application Guide - Design with GaN Enhancement mode HEMT 
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·         GN002 Thermal Design for Top-Side Cooled GaNPX-T Devices 
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·         GN004 Design considerations of paralleled GaN HEMT 
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·         GN005 App Note - PCB Thermal Design Guide for GaN Enhancement Mode Power Transistors 
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·         GN006 App Note SPICE model for GaN HEMT- usage guidelines and example 
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·         GN007 Modeling Thermal Behavior of GaNPX® E-HEMTs Using RC Thermal SPICE Models 
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·         GN008 GaN Switching Loss Simulation Using LTSpice 
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Expand product table » »
Part No. Voltage Current Rds(on) Dimensions Cooling
[V] [A] [mΩ] [mm]
  GS66502B 650 V 7.5 A 200 mΩ 5.0 x 6.6 x 0.51 Bottom-side
  GS66504B 650 V 15 A 100 mΩ 5.0 x 6.6 x 0.51 Bottom-side
  GS66506T 650 V 22.5 A 67 mΩ 5.6 x 4.5 x 0.54 Top-side
  GS66508B 650 V 30 A 50 mΩ 7.0 x 8.4 x 0.51 Bottom-side
  GS66508P 650 V 30 A 50 mΩ 10.0 x 8.7 x 0.51 Bottom-side
  GS66508T 650 V 30 A 50 mΩ 6.9 x 4.5 x 0.54 Top-side
  GS66516T 650 V 60 A 25 mΩ 9.0 x 7.6 x 0.54 Top-side
  GS66516B 650 V 60 A 25 mΩ 11.0 x 9.0 x 0.51 Bottom-side

GS-065-120-1-D
650 V
120 A
12 mΩ
12.6 x 5.6 x 0.3 
Die


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