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100 V E-HEMT transistors



Application Notes

·         GN001 Application Guide - Design with GaN Enhancement mode HEMT 
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·         GN002 Thermal Design for Top-Side Cooled GaNPX-T Devices 
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·         GN004 Design considerations of paralleled GaN HEMT 
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·         GN005 App Note - PCB Thermal Design Guide for GaN Enhancement Mode Power Transistors 
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·         GN006 App Note SPICE model for GaN HEMT- usage guidelines and example 
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·         GN007 Modeling Thermal Behavior of GaNPX® E-HEMTs Using RC Thermal SPICE Models 
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·         GN008 GaN Switching Loss Simulation Using LTSpice 
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Expand product table » »
Part No. Voltage Current Rds(on) Dimensions Cooling
[V]  [A] [mΩ] [mm]
  GS61004B 100 V 45 A 15 mΩ 4.6 x 4.4 x 0.51 Bottom-side
  GS61008P 100 V 90 A 7 mΩ 7.6 x 4.6 x 0.51 Bottom-side
  GS61008T 100 V 90 A 7 mΩ 7.0 x 4.0 x 0.54

Top-side


GS-010-120-1-T
100 V
120 A
5 mΩ
7.0 x 4.0 x 0.54
Top-Side


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